- 您现在的位置：买卖IC网 > Sheet目录462 > IXTH60N25 (IXYS)MOSFET N-CH 250V 60A TO-247
Advance Technical Information
Standard
IXTH 60N25
V DSS
= 250 V
Power MOSFET
N-Channel Enhancement Mode
I D(cont) = 60 A
R DS(on) = 46 m ?
Symbol
Test conditions
Maximum ratings
V DSS
V DGR
V GS
T J = 25°C to 150°C
T J = 25°C to 150°C; R GS = 1.0 M ?
Continuous
250
250
±20
V
V
V
TO-247 AD
V GSM
I D25
I DM
Transient
T C = 25 ° C MOSFET chip capability
T C = 25 ° C, pulse width limited by T JM
±30
60
240
V
A
A
G
D
S
D (TAB)
I AR
60
A
E AR
E AS
dv/dt
P D
T J
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 150 ° C, R G = 2 ?
= 25 ° C
T C
50
1.5
5
400
-55 ... +150
mJ
J
V/ns
W
° C
G = Gate
S = Source
Features
D = Drain
Tab = Drain
T JM
T stg
M d
Weight
Mounting torque
TO-264
150
-55 ... +150
1.13/10
6
° C
° C
Nm/lb.in.
g
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
? International standard package
JEDEC TO-247 AD
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
° C
? Fast switching times
? High commutating dv/dt rating
Applications
? Motor controls
Symbol
Test Conditions
Characteristic Values
? DC choppers
(T J = 25°C unless otherwise specified)
Min. Typ.
Max.
? Switched-mode
power supplies
and resonant-mode
V DSS
V GS(th)
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
250
2.0
4.0
V
V
? Uninterruptible Power Supplies (UPS)
Advantages
I GSS
V GS = ±20 V DC, V DS = 0
±100
nA
I DSS
V DS = V DSS
V GS = 0 V
T J = 125°C
25
250
μ A
μ A
? Easy to mount with one screw
(isolated mounting screw hole)
? Space savings
R DS(on)
V GS = 10 V, I D = 15A
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
46 m ?
? High power density
? 2003 IXYS All rights reserved
DS99010(03/03)
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXTH6N100D2
MOSFET N-CH 1000V 6A TO247
IXTH6N120
MOSFET N-CH 1200V 6A TO-247AD
IXTH6N150
MOSFET N-CH 1500V 6A TO-247
IXTH6N80A
MOSFET N-CH 800V 6A TO-247
IXTH6N90A
MOSFET N-CH 900V 6A TO-247
IXTH72N20
MOSFET N-CH 200V 72A TO-247
IXTH75N15
MOSFET N-CH 150V 75A TO-247
IXTH76N25T
MOSFET N-CH 250V 76A TO-247
相关代理商/技术参数
IXTH60N30T
功能描述:MOSFET 60 Amps 300V 60 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH62N25T
功能描述:MOSFET 62 Amps 250V 50 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH67N08
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 67A I(D) | TO-218VAR
IXTH67N08MA
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 67A I(D) | TO-247(5)
IXTH67N08MB
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 67A I(D) | TO-247(5)
IXTH67N10
功能描述:MOSFET 67 Amps 100V 0.025 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH67N10MA
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 67A I(D) | TO-247(5)
IXTH67N10MB
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 67A I(D) | TO-247(5)